Co-doping of diamond with boron and sulfur

被引：44

作者：

Eaton, SC ^{[1
]}

Anderson, AB

Angus, JC

Evstefeeva, YE

Pleskov, YV

机构：

[1] Case Western Reserve Univ, Dept Chem Engn, Cleveland, OH 44106 USA

[2] Case Western Reserve Univ, Dept Chem, Cleveland, OH 44106 USA

[3] AN Frumkin Electrochem Inst, Moscow 117071, Russia

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2002年 / 5卷 / 08期

关键词：

D O I：

10.1149/1.1486821

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Sulfur incorporation in diamond was achieved by co-doping using H2S and trimethylboron. Particle induced X-ray emission, X-ray photoelectron spectroscopy, and secondary-ion mass spectroscopy confirmed the presence of sulfur, which was more concentrated in the near-surface region. The films were examined by Mott-Schottky analysis, open-circuit potentials in the presence of UV irradiation, and the thermoelectric effect. Diamond films grown with sulfur and limited amounts of boron were n-type; films grown at higher B/S ratios were p-type. The source of the donors is not known; they could arise from near-surface effects, defects, or impurity bands. (C) 2002 The Electrochemical Society.

引用

页码：G65 / G68

页数：4

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