Two-way switch for binary decision diagram logic using silicon single-electron transistors

被引:6
作者
He, J [1 ]
Durrani, ZAK [1 ]
Ahmed, H [1 ]
机构
[1] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England
关键词
single-electron transistor; two-way switch; binary decision diagram; logic circuits;
D O I
10.1016/j.mee.2004.03.040
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A two-way switch for binary decision diagram logic applications has been implemented using silicon single-electron transistors. Each single-electron transistor consists of a silicon nanowire with two in-plane side-gates, fabricated in silicon-on-insulator material. The switch uses three transistors, arranged as bi-directional electron pumps. At 4.2 K, few-electron packets are switched by an input voltage from an entry branch into one of two exit branches. The circuit is driven by a 3 MHz sine wave signal. The switch can be used as the basic building block in few-electron logic circuits designed using binary decision diagram logic. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:712 / 718
页数:7
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