Characteristics of electron pump circuits using silicon multiple tunnel junctions

被引：7

作者：

Altebaeumer, T ^{[1
]}

Ahmed, H ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Ctr Microelect Res, Cambridge CB3 0HE, England

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 01期

关键词：

Coulomb blockade; single electron transistor; multiple tunnel junction; electron pump; silicon;

D O I：

10.1143/JJAP.40.80

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron pumps based on multiple tunnel junctions have been realized in silicon using highly doped nanowires in silicon-on-insulator material. The electron pump characteristics show a clear transfer of the pattern of Coulomb blockade oscillations to one of a pumping action. Furthermore, the pump current tends to scale linearly with the frequency. The results can be explained by a pumping mechanism in asymmetric multiple tunnel junctions. These devices: allow sufficient control of electron packets which are potentially useful as basic building blocks of silicon-based binary-decision-diagram logic circuits.

引用

页码：80 / 82

页数：3

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