Size effects in ultrathin epitaxial ferroelectric heterostructures

被引:101
作者
Nagarajan, V [1 ]
Prasertchoung, S
Zhao, T
Zheng, H
Ouyang, J
Ramesh, R
Tian, W
Pan, XQ
Kim, DM
Eom, CB
Kohlstedt, H
Waser, R
机构
[1] Univ Maryland, Mat Res Sci & Engn Ctr, College Pk, MD 20742 USA
[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[3] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
[4] Forschungszentrum Julich, Inst Festkorperforsch & CNI, D-52425 Julich, Germany
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1765742
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter we report on the effect of thickness scaling in model PbZr0.2Ti0.8O3(PZT)/SrRuO3 heterostructures. Although theoretical models for thickness scaling have been widely reported, direct quantitative experimental data for ultrathin perovskite (<10 nm) films in the presence of real electrodes have still not been reported. In this letter we show a systematic quantitative experimental study of the thickness dependence of switched polarization in (001) epitaxial PZT films, 4 to 80 nm thick. A preliminary model based on a modified Landau Ginzburg approach suggests that the nature of the electrostatics at the ferroelectric-electrode interface plays a significant role in the scaling of ferroelectric thin films. (C) 2004 American Institute of Physics.
引用
收藏
页码:5225 / 5227
页数:3
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