Electronic structures of III-V based ferromagnetic semiconductors: half-metallic phase

被引：84

作者：

Park, JH ^{[1
]}

Kwon, SK ^{[1
]}

Min, BI ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea

来源：

PHYSICA B-CONDENSED MATTER | 2000年 / 281卷

关键词：

half-metal; magnetic semiconductors; electronic structure;

D O I：

10.1016/S0921-4526(99)00984-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electronic structures of Ga1-xMnxAs (x = 0.063, 0.125) are investigated using the local density approximation (LDA) and LDA + U band calculations. Both the LDA and LDA + U yield the half-metallic ground states for (Ga0.938Mn0.063)As, but only the LDA + U electronic structures art: consistent with photoemission spectra. The states at the Fermi level are mainly of As 4p character, which mediates the RKKY-type magnetic intercation among Mn ions. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：703 / 704

页数：2

共 7 条

[1] Ferromagnetism and its stability in the diluted magnetic semiconductor (In,Mn)As [J].