High purity ZnO nanowire arrays were synthesized uniformly on a 1.5 cm x 2 cm tin-doped indium oxide (ITO) glass substrate. The ZnO nanowire arrays were formed with a uniform diameter distribut on of 30 similar to 50 nm and a length of about 5 mu m, synthesized via thermal decomposition of zinc acetate at 300 degrees C in air. Analysis by X-ray diffraction and transmission electron microscopy showed that the ZnO nanowires are of single crystal structure with a preferred growth orientation of [001]. A study of the growth mechanism showed that it is a vapor-solid (VS) growth process. The synthesis of these nanowires begins with the processes of dehydration, vaporization, decomposition, and oxidation of the zinc acetate. Next, the ZnO clusters are deposited to form seeds that give rise to selective epitaxial growth of the ZnO nanowires. Optical analysis of ZnO nanowires was performed by UV-visible and fluorescence spectrophotometry, investigating both the photocurrent characteristics and UV photoresponse of the ZnO nanowire photodetectors. A study of optical properties showed that the as-produced ZnO nanowires have great potential as UV photocletectors/sensors.