Electroluminescence in MOS structures with Si/SiO2 nanometric multilayers

被引：28

作者：

Gaburro, Z

Pucker, G

Bellutti, P

Pavesi, L

机构：

[1] Univ Trent, INFM, I-38050 Trento, Italy

[2] Univ Trent, Dept Phys, I-38050 Trento, Italy

[3] IRST, ITC, I-38050 Trento, Italy

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 114卷 / 01期

关键词：

nanofabrications; electronic transport; luminescence;

D O I：

10.1016/S0038-1098(99)00578-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Silicon light emitting devices, compatible with the conventional CMOS process, have been fabricated and tested. The structure of the devices is based on a MOS capacitor where nanometer thick silicon/silicon dioxide multilayers have been grown in the dielectric. Room temperature photo- and electroluminescence were measured. While photoluminescence has been recognized as being due to electron-hole recombination in the nanometer thick silicon layers, electroluminescence was mainly related to hot-electron relaxation in the substrate. The measured external quantum efficiency of the electroluminescence is about 5 x 10(-5). (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：33 / 37

页数：5

共 12 条

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