Efficient light absorption in metal-semiconductor-metal nanostructures

被引：84

作者：

Collin, S ^{[1
]}

Pardo, F ^{[1
]}

Teissier, R ^{[1
]}

Pelouard, JL ^{[1
]}

机构：

[1] CNRS, LPN, F-91460 Marcoussis, France

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 02期

关键词：

D O I：

10.1063/1.1771467

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A nanoscale metal-semiconductor grating is proposed for efficient and ultrafast photodetection. Theoretical and experimental results of efficient absorption in nanoscopic semiconductor wires are presented. The strong confinement of light in subwavelength metal-semiconductor, gratings is achieved by Fabry-Perot resonances involving vertical transverse magnetic surface-plasmon waves and transverse electric guided waves. Photodetectors have been fabricated with 40 X 100 nm cross sections of Ag and GaAs wires. The reflectivity and photocurrent mesurements are in good agreement with theoretical estimates. (C) 2004 American Institute of Physics.

引用

页码：194 / 196

页数：3

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