Low-permittivity nanocomposite materials using sculptured thin film technology

被引:17
作者
Venugopal, VC [1 ]
Lakhtakia, A
Messier, R
Kucera, JP
机构
[1] Penn State Univ, Dept Engn Sci & Mech, Computat & Theoret Mat Sci CATMAS Grp, University Pk, PA 16802 USA
[2] Penn State Univ, Mech & Mat Res Lab, University Pk, PA 16802 USA
[3] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 01期
关键词
D O I
10.1116/1.591146
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The feasibility of using sculptured thin him technology to engineer multiphase low-permittivity (also called low-k) materials for microelectronic and electronic packaging applications is established via a numerical study. The chosen films are theoretically modeled as multiphase, uniaxial, dielectric nanocomposite materials and their anisotropic relative permittivity tensors are estimated using the Bruggeman formalism. (C) 2000 American Vacuum Society. [S0734-211X(00)04901-5].
引用
收藏
页码:32 / 36
页数:5
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