Thin films of HfO2 for high-k gate oxide applications from engineered alkoxide- and amide-based MOCVD precursors

被引：29

作者：

Thomas, Reji ^{[1
]}

Rije, Eduard

Ehrhart, Peter

Milanov, Andrian

Bhakta, Raghunandan

Bauneman, Arne

Devi, Anjana

Fischer, Roland

Waser, Rainer

机构：

[1] Forschungszentrum Julich, Inst Solid State Res, D-52425 Julich, Germany

[2] Forschungszentrum Julich, Inst Bio & Nanosyst, Ctr Nanoelect Syst Inforamt Technol, D-52425 Julich, Germany

[3] Ruhr Univ Bochum, Lehrstuhl Anorgan Chem 2, Inorgan Mat Chem Grp, D-44780 Bochum, Germany

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2007年 / 154卷 / 03期

关键词：

D O I：

10.1149/1.2431324

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

HfO2 thin films with thickness between 2 and 20 nm were grown by liquid injection metallorganic chemical vapor deposition, LI-MOCVD, on SiOx/Si (100) substrates. Different mononuclear precursors ([Hf(OPri)(2)(tbaoac)(2)], [Hf(NEt2)(2)(guanid)(2)], and [Hf(OBut)(2)(dmae)(2)] were tested in combination with different solvents. Growth rate, surface morphology, crystal structure, and crystal density of the as-deposited films were analyzed as a function of deposition temperature. The influence of postdeposition annealing on the densification and crystallization was studied. Correlation of the structural properties with the electrical properties of metal insulator semiconductor capacitors with Pt top electrodes is discussed. Fully silicided metal gate stacks are additionally discussed for selected samples. (c) 2007 The Electrochemical Society.

引用

页码：G77 / G84

页数：8

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