EUV interferometric testing and alignment of the 0.3 NA MET optic

被引:23
作者
Goldberg, KA [1 ]
Naulleau, P [1 ]
Denham, P [1 ]
Rekawa, SB [1 ]
Jackson, K [1 ]
Liddle, JA [1 ]
Anderson, EH [1 ]
机构
[1] Lawrence Berkeley Natl Lab, Ctr Xray Opt, Berkeley, CA 94720 USA
来源
EMERGING LITHOGRAPHIC TECHNOLOGIES VIII | 2004年 / 5374卷
关键词
extreme ultraviolet interferometry; extreme ultraviolet lithography; EUV; at-wavelength testing; MET;
D O I
10.1117/12.546199
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Extreme ultraviolet (EUV) interferometry has been successfully performed for the first time at 0.3 numerical aperture (NA). Extensive EUV "at-wavelength" testing including alignment, was performed on a newly created Micro Exposure Tool (MET) optic designed for sub-50-nm EUV lithographic imaging experiments. The two-mirror, 0.3 NA MET is arguably the highest resolution light-projection lithography tool ever made. Using both lateral shearing and phase-shifting point-diffraction interferometry, the wavefront was measured across the field of view, and the alignment was optimized in preparation for imaging. The wavefront quality reached 0.55 nm RMS (lambda(EUV)/24.5) in a 37-term annular Zernike polynomial series, dominated by higher-order spherical aberration. Measurements included calibrations of the interferometer accuracy, assessment of repeatability, and cross-comparisons of visible and EUV interferometric measurements. The comparisons and the final, measured wavefront quality were affected by an apparent alignment drift, several tenths of a run in magnitude. Significant unresolved differences between testing strategies shows that continued work is needed to improve the measurement accuracy to levels required for EUV lithography.
引用
收藏
页码:64 / 73
页数:10
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