Interface and domain structures of (116)-oriented SrBi2Ta2O9 thin film epitaxially grown on (110) SrTiO3 single crystal

被引:19
作者
Suzuki, T
Nishi, Y
Fujimoto, M
Ishikawa, K
Funakubo, H
机构
[1] Taiyo Yuden Co Ltd, Gunma 3703347, Japan
[2] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 11A期
关键词
layered perovskite structure; domain structure; transmission electron microscopy; epitaxial growth; strontium titanate substrate; MOCVD; twin;
D O I
10.1143/JJAP.38.L1265
中图分类号
O59 [应用物理学];
学科分类号
摘要
The interface and domain structure's in epitaxial (116)-oriented SrBi2Ta2O9 films on (110) SrTiO3 substrates were investigated by high-resolution transmission electron microscopy. The film contains domain boundaries due to the formation of two types of (116)-oriented crystallites with symmetrical tilted c-axis directions and numerous wavy c/6 translational boundaries originating from the domain boundaries. Each epitaxial crystallite forms a semicoherent interface accompanying periodic lattice strain, where the alternate continuity of perovskite layers in the film to the perovskite structure of SrTiO3 is found. Such a quasi-stable interface structure may be the primary cause of difficulty in the preparation of epitaxial SrBi2Ta2O9 films with the tilted c-axis.
引用
收藏
页码:L1265 / L1267
页数:3
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