High quality a-Si:H films grown at high deposition rates

被引：1

作者：

Lubianiker, Y ^{[1
]}

Tan, YY ^{[1
]}

Cohen, JD ^{[1
]}

Ganguly, G ^{[1
]}

机构：

[1] Univ Oregon, Dept Phys, Eugene, OR 97403 USA

来源：

AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999 | 1999年 / 557卷

关键词：

D O I：

10.1557/PROC-557-139

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Intrinsic a-Si:H samples were grown with and without hydrogen (H-2) dilution of silane at different growth rates. We find that the dilution leads to a considerable reduction in the defect density, in particular at high growth rates. The defect density is particularly low for samples grown using H-2 dilution conditions at growth rates as high as 10 Angstrom/sec, Using transient photocapacitance measurements we find evidence for a small concentration of microcrystallites embedded in the amorphous films. An increase in the microcrystalline fraction correlates with a decrease in the defect density.

引用

页码：139 / 144

页数：6

共 18 条

[1]

ARYA R, 1992, P 11 EC PVSEC, P199

[2]

COHEN JD, 1984, SEMICONDUCT SEMIMET, V21, P9

[3] DEEP DEFECT STRUCTURE AND CARRIER DYNAMICS IN AMORPHOUS-SILICON AND SILICON-GERMANIUM ALLOYS DETERMINED BY TRANSIENT PHOTOCAPACITANCE METHODS [J].