ZnO thin films produced by magnetron sputtering

被引:185
作者
Gao, W [1 ]
Li, ZW [1 ]
机构
[1] Univ Auckland, Dept Chem & Mat Engn, Auckland, New Zealand
关键词
microstructure; ZnO; thin films; magnetron sputtering deposition; conductivity; photoluminescence;
D O I
10.1016/j.ceramint.2003.12.197
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
ZnO thin films were deposited onto glass substrates with direct current (dc) or radio frequency (rf) magnetron sputtering using Zn or ZnO target. SEM and XRD analysis demonstrated that the type of deposition mode, plasma excitation, working pressure and oxygen partial pressure, bias, working distance, and doping could significantly change the quality and microstructure of the films. The electrical conductivity of ZnO films is strongly affected by the deposition mode (dc or rf), crystal structure, chemical composition and microstructure. Photoluminescence of these films were also studied, and the relationships of processing parameters, microstructure, and properties were explored. (C) 2004 Elsevier Ltd and Techna Group S.r.1. All rights reserved.
引用
收藏
页码:1155 / 1159
页数:5
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