Micro-discharge at strip edge of silicon microstrip sensors

被引：27

作者：

Ohsugi, T

Iwata, Y

Ohyama, H

Ohmoto, T

Yoshikawa, M

Handa, T

Kurino, K

Fujita, K

Tamura, N

Hatakenaka, T

Maeohmichi, M

Takahata, M

Nakao, M

Asai, M

Kimura, A

Takashima, R

Yamamoto, K

Yamamura, K

机构：

[1] OKAYAMA UNIV,OKAYAMA 700,JAPAN

[2] HIROSHIMA INST TECHNOL,HIROSHIMA 73151,JAPAN

[3] KYOTO UNIV,KYOTO 612,JAPAN

[4] HAMAMATSU PHOTON KK,HAMAMATSU,SHIZUOKA 435,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 383卷 / 01期

关键词：

D O I：

10.1016/S0168-9002(96)00690-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have investigated the micro-discharge (micro-breakdown) phenomenon which is potentially a serious problem in operating in a high radiation environment. Numerical calculation of field strength for the model structure of the microstrip sensor gives us a quantitative understanding of each different cause of micro-discharge. The structure of the microstrip sensor can be optimized through this field calculation for suppressing the micro-discharge. We propose a new strip structure to suppress the micro-discharge.

引用

页码：116 / 122

页数：7

共 13 条

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