Dark spot formation relative to ITO surface roughness for polyfluorene devices

被引：61

作者：

Liu, G ^{[1
]}

Kerr, JB ^{[1
]}

Johnson, S ^{[1
]}

机构：

[1] Lawrence Berkeley Natl Lab, Environm Energy Technol Div, Berkeley, CA 94720 USA

来源：

SYNTHETIC METALS | 2004年 / 144卷 / 01期

关键词：

OLED; failure mechanism; ITO surface; dark spot; interface;

D O I：

10.1016/j.synthmet.2004.01.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The failure behaviors of ITO/PEDOT;PSS/polyfluorene/Al devices are different depending on the surface roughness of the sputtered ITO anode film. The spikes on ITO surface are responsible for the initial local shorts of the device, which develop into dark spots very quickly. Indium adsorption is observed on the polymer and Al cathode interface. A chemical etching procedure is used to smoothen the ITO surface without changing the ITO thickness and the sheet resistance. Devices made out of smooth ITO show minimum changes at polymer-cathode interface during operation. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：1 / 6

页数：6

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