Current-dependent silicon oxide growth during scanned probe lithography

被引：10

作者：

Ruskell, TG

Pyle, JL

Workman, RK

Yao, X

Sarid, D

机构：

[1] Optical Sciences Center, University of Arizona, Tucson

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 15期

关键词：

lithography; atomic force microscopy;

D O I：

10.1049/el:19960882

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurement of picoAmp currents during silicon oxide growth by scanning probe lithography is reported. The observed current is attributed to the reduction of H+ ions produced by the oxidation process. The local electrical quality of the nanofabricated oxide lines, probed by local Fowler-Nordheim tunnelling, is found to be uniform and highly insulating.

引用

页码：1411 / 1412

页数：2

共 6 条

[1] MODIFICATION OF HYDROGEN-PASSIVATED SILICON BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR [J].