Overgrowth of GaN layer on GaN nano-columns by RF-molecular beam epitaxy

被引：26

作者：

Kusakabe, K ^{[1
]}

Kikuchi, A ^{[1
]}

Kishino, K ^{[1
]}

机构：

[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷 / 1-4 II期

基金：

日本学术振兴会;

关键词：

nitrides; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(01)02113-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth behavior of GaN layers overgrown on nano-columns on sapphire substrates by RF-plasma molecular beam epitaxy was investigated. Free-standing GaN films were obtained through the coalescence of nano-columns, showing the layered structure supported by underlying columnar GaN. Overgrown GaN layers were characterized with respect to the residual strain. As a result, it was found that overgrown GaN films with layer thickness of 2.7 mum possessed a stress-free property such as Raman frequency of high-frequency E-2 mode of 568.1 cm(-1). (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：988 / 992

页数：5

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