Wafer-scale transfer of nanoimprinted patterns into silicon substrates

被引：22

作者：

Hubbard, G. ^{[2
]}

Abbott, S. J. ^{[2
]}

Chen, Q. ^{[1
]}

Allsopp, D. W. E. ^{[1
]}

Wang, W. N. ^{[1
]}

Bowen, C. R. ^{[1
]}

Stevens, R. ^{[1
]}

Satka, A. ^{[3
]}

Hasko, D. ^{[3
]}

Uherek, F. ^{[3
]}

Kovac, J. ^{[3
]}

机构：

[1] Univ Bath, Fac Engn & Design, Bath BA2 7AY, Avon, England

[2] MacDermid Autotype Ltd, Wantage OX12 7BZ, England

[3] Ctr Int Laser, Bratislava 81219, Slovakia

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2009年 / 41卷 / 06期

关键词：

Nanoimprinting; Pattern transfer; Silicon;

D O I：

10.1016/j.physe.2008.08.014

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A simple low cost method of nanoimprinting has been developed. The technique uses a flexible disposable master and lends itself to roll-to-roll processing. Residual layer thicknesses of 5-10 nm are routinely achieved. This enables the critical step of pattern transfer into hard substrates by reactive ion etching, an essential step in the fabrication of sub-wavelength photonic device elements on a wafer-scale. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1118 / 1121

页数：4

共 4 条

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[2]

[Anonymous], ALTERNATIVE LITHOGRA

[3] Nanoimprinting over topography and multilayer three-dimensional printing [J].

Bao, LR ;

Cheng, X ;

Huang, XD ;

Guo, LJ ;

Pang, SW ;

Yee, AF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06) :2881-2886

[4] Nanoimprinting using liquid-phase hydrogen silsesquioxane [J].

Nakamatsu, Ken-ichiro ;

Matsui, Shinji .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (20-23) :L546-L548

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