Nanoimprinting using liquid-phase hydrogen silsesquioxane

被引:20
作者
Nakamatsu, Ken-ichiro [1 ]
Matsui, Shinji [1 ]
机构
[1] Univ Hyogo, LASTI, Grad Sch Sci, Ako, Hyogo 6781205, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 20-23期
关键词
hydrogen silsesquioxane (HSQ); liquid phase; nanoimprint; lithography; low pressure; thin residual layer;
D O I
10.1143/JJAP.45.L546
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have newly developed an imprinting technique using liquid-phase hydrogen silsesquioxane (HSQ) as an alternate replication material for spin-coated HSQ resin currently used. Various patterns with linewidth ranging from 25 nm to 300 mu n , were demonstrated by imprinting using liquid-phase HSQ. We simultaneously fabricated arbitrary patterns including both submicron and greater than one hundred micron patterns by a one-step process. Moreover, after imprinting, the residual HSQ layer that remained in the compressed area was less than 10 nm thick.
引用
收藏
页码:L546 / L548
页数:3
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