Bilayer resist method for room-temperature nanoimprint lithography

被引：35

作者：

Nakamatsu, K

Watanabe, K

Tone, K

Katase, T

Hattori, W

Ochiai, Y

Matsuo, T

Sasago, M

Namatsu, H

Komuro, M

Matsui, S

机构：

[1] Himeji Inst Technol, LASTI, Grad Sch Sci, Kamigori, Hyogo 6781205, Japan

[2] Meisyo Co, Hikami, Hyougo, Japan

[3] NEC Fundamental Res Labs, Tsukuba, Ibaraki 3058051, Japan

[4] Matsushita Elect Ind Co, Minami Ku, Kyoto 6018413, Japan

[5] NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[6] AIST, Adv Semicond Res Ctr, Tsukuba, Ibaraki 3058501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 6B期

关键词：

nanoimprint; lithography; HSQ; bilayer; high aspect resist patterns;

D O I：

10.1143/JJAP.43.4050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A compact nanoimprint lithography (NIL) apparatus using the driving power of a servomotor has been newly developed. A bilayer resist method using hydrogen silsequioxane (HSQ) as a top layer and AZ photoresist as a bottom layer has been proposed to achieve high-aspect resist patterns on a nonflat surface for room-temperature nanoimprint lithography (RT-NIL). The etching rate ratio of HSQ to AZ photoresist was higher than 100 for O-2 reactive ion etching (RIE), indicating that the HSQ top layer has sufficient etching tolerance. We have achieved the high-aspect nanostructure patterns of 100-nm-linewidth and 1-mum-height using the NIL apparatus developed here.

引用

页码：4050 / 4053

页数：4

共 16 条

[1] Step and flash imprint lithography: Template surface treatment and defect analysis [J].

Bailey, T ;

Choi, BJ ;

Colburn, M ;

Meissl, M ;

Shaya, S ;

Ekerdt, JG ;

Sreenivasan, SV ;

Willson, CG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06) :3572-3577

[2] Imprint lithography with 25-nanometer resolution [J].

Chou, SY ;

Krauss, PR ;

Renstrom, PJ .

SCIENCE, 1996, 272 (5258) :85-87

[3] Sub-10 nm imprint lithography and applications [J].

Chou, SY ;

Krauss, PR ;

Zhang, W ;

Guo, LJ ;

Zhuang, L .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2897-2904

[4] IMPRINT OF SUB-25 NM VIAS AND TRENCHES IN POLYMERS [J].

CHOU, SY ;

KRAUSS, PR ;

RENSTROM, PJ .

APPLIED PHYSICS LETTERS, 1995, 67 (21) :3114-3116

[5] Nanoimprint lithography at the 6 in. wafer scale [J].

Heidari, B ;

Maximov, I ;

Montelius, L .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06) :3557-3560

[6] Room temperature nanoimprint technology using hydrogen silsequioxane (HSQ) [J].

Igaku, Y ;

Matsui, S ;

Ishigaki, H ;

Fujita, J ;

Ishida, M ;

Ochiai, Y ;

Namatsu, H ;

Komuro, M ;

Hiroshima, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (6B) :4198-4202

[7] Imprint characteristics by photo-induced solidification of liquid polymer [J].

Komuro, M ;

Taniguchi, J ;

Inoue, S ;

Kimura, N ;

Tokano, Y ;

Hiroshima, H ;

Matsui, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (12B) :7075-7079

[8] Fabrication of quantum point contacts by imprint lithography and transport studies [J].

Martini, I ;

Kuhn, S ;

Kamp, M ;

Worschech, L ;

Forchel, A ;

Eisert, D ;

Koeth, J ;

Sijbesma, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06) :3561-3563

[9] Room-temperature nanoimprint and nanotransfer printing using hydrogen silsequioxane [J].

Matsui, S ;

Igaku, Y ;

Ishigaki, H ;

Fujita, J ;

Ishida, M ;

Ochiai, Y ;

Namatsu, H ;

Komuro, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (02) :688-692

[10] Room temperature replication in spin on glass by nanoimprint technology [J].

Matsui, S ;

Igaku, Y ;

Ishigaki, H ;

Fujita, J ;

Ishida, M ;

Ochiai, Y ;

Komuro, M ;

Hiroshima, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06) :2801-2805

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