The use of a scanning tunneling microscope (STM) for investigation of local photoconductivity of quantum-dimensional semiconductor structures

被引:2
作者
Aleshkin, VY [1 ]
Biryukov, AV [1 ]
Gaponov, SV [1 ]
Krasil'nik, ZF [1 ]
Mironov, VL [1 ]
机构
[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod, Russia
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1134/1.1262718
中图分类号
O59 [应用物理学];
学科分类号
摘要
The possibility is demonstrated of using the STM for recording spectra of photoconductivity of quantum-dimensional semiconductor structures with a high spatial resolution. Studies are made into the local photoconductivity of GaAs/InxGa1-xAs based quantum wells and quantum points as a function of the depth of location of the quantum-dimensional structure relative to the surface space charge region. For quantum points in the vicinity of the sample surface, spectra are obtained which are characterized by features associated with the individual energy spectrum of those points. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码:1 / 3
页数:3
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