THE CHARACTERIZATION OF GAAS AND ALGAAS BY PHOTOLUMINESCENCE

被引：12

作者：

LEITCH, AWR

EHLERS, HL

机构：

来源：

INFRARED PHYSICS | 1988年 / 28卷 / 06期

关键词：

D O I：

10.1016/0020-0891(88)90071-1

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：433 / 440

页数：8

共 22 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[2] PHOTO-LUMINESCENCE OF SHALLOW ACCEPTORS IN AL0.28GA0.72AS [J].

BALLINGALL, JM ;

COLLINS, DM .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :341-345

[3] RADIATIVE LIFETIMES OF DONOR-ACCEPTOR PAIRS IN P-TYPE GALLIUM ARSENIDE [J].

DINGLE, R .

PHYSICAL REVIEW, 1969, 184 (03) :788-&

[4]

EHLERS HL, IN PRESS S AFR J SCI

[5] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF HIGH-PURITY GAAS AND ALGAAS [J].

HEIBLUM, M ;

MENDEZ, EE ;

OSTERLING, L .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6982-6988

[6] LUMINESCENCE AND EXCITATION-SPECTRA OF EXCITON EMISSION IN GAAS [J].

HEIM, U ;

HIESINGE.P .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (02) :461-470

[7] OMVPE GROWTH OF 660 NM ALGAAS DOUBLE HETEROJUNCTION LEDS [J].

KELLERT, FG ;

MOON, RL .

JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (01) :13-19

[8]

LEITCH AWR, 1987, S AFR J SCI, V83, P676

[9]

LEITCH AWR, IN PRESS S AFR J SCI

[10] COMPOSITION DEPENDENCE OF PHOTOLUMINESCENCE OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MIHARA, M ;

NOMURA, Y ;

MANNOH, M ;

YAMANAKA, K ;

NARITSUKA, S ;

SHINOZAKI, K ;

YUASA, T .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3760-3764

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