OMVPE GROWTH OF 660 NM ALGAAS DOUBLE HETEROJUNCTION LEDS

被引：4

作者：

KELLERT, FG

MOON, RL

机构：

[1] Hewlett-Packard Co, Optoelectronics, Div, San Jose, CA, USA, Hewlett-Packard Co, Optoelectronics Div, San Jose, CA, USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 01期

关键词：

ORGANOMETALLICS - PHOTOLUMINESCENCE - SEMICONDUCTING ALUMINUM COMPOUNDS - Growth;

D O I：

10.1007/BF02649944

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the OMVPE growth of 660 nm AlGaAs LEDs. Growth conditions that yield maximum photoluminescent intensities from the active layers are discussed. DH LEDs are fabricated with different values of the active layer doping concentration, thickness and interface grading. Electroluminescent decay times, spectra and efficiencies are reported.

引用

页码：13 / 19

页数：7

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