ANALYSIS OF ROOM-TEMPERATURE LUMINESCENCE SPECTRA OF VPE-GROWN NITROGEN-DOPED GALLIUM-PHOSPHIDE

被引：5

作者：

LINDQUIST, PF ^{[1
]}

LARSEN, TL ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,HPA DIV,PALO ALTO,CA 94304

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1975年 / 4卷 / 03期

关键词：

D O I：

10.1007/BF02666236

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：567 / 590

页数：24

共 15 条

[1] RECOMBINATION PROCESSES RESPONSIBLE FOR ROOM-TEMPERATURE NEAR-BAND-GAP RADIATION FROM GAP [J].

BACHRACH, RZ ;

LORIMOR, OG .

PHYSICAL REVIEW B, 1973, 7 (02) :700-713

[2] HEMISPHERICAL GAP-N GREEN ELECTROLUMINESCENT DIODES [J].

BACHRACH, RZ ;

DIXON, RW ;

LORIMOR, OG .

SOLID-STATE ELECTRONICS, 1973, 16 (09) :1037-&

[3] MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1) [J].

BAN, VS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) :1473-&

[4]

BILLMEYER FW, 1968, PRINCIPLES COLOR TEC, P43

[5]

BURMEISTER RA, 1969, T METALL SOC AIME, V245, P587

[6] RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J].

CRAFORD, MG ;

SHAW, RW ;

HERZOG, AH ;

GROVES, WO .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4075-&

[7] GREEN ELECTROLUMINESCENCE FROM GALLIUM PHOSPHIDE DIODES NEAR ROOM TEMPERATURE [J].

DEAN, PJ ;

GERSHENZON, M ;

KAMINSKY, G .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) :5332-+

[8]

KERPS D, UNPUBLISHED WORK

[9]

LIGHTOWLERS EC, 1972, J ELECTRON MATER, V1, P1

[10] EFFICIENT GREEN ELECTROLUMINESCENT JUNCTIONS IN GAP [J].

LOGAN, RA ;

WHITE, HG ;

WIEGMANN, W .

SOLID-STATE ELECTRONICS, 1971, 14 (01) :55-&

← 1 2 →