Interface traps in jet-vapor-deposited silicon nitride-silicon capacitors

被引：8

作者：

Mallik, A ^{[1
]}

Wang, XW ^{[1
]}

Ma, TP ^{[1
]}

Cui, GJ ^{[1
]}

Tamagawa, T ^{[1
]}

Halpern, BL ^{[1
]}

Schmitt, JJ ^{[1
]}

机构：

[1] JET PROC CORP,NEW HAVEN,CT 06511

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 11期

关键词：

D O I：

10.1063/1.362529

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The properties of interface traps in metal-silicon nitride (deposited by jet vapor deposition technique) -silicon (MNS) capacitors have been studied in some detail. In comparison with those in metal-oxide-Si capacitors, the interface traps in our MNS capacitors exhibit the following major differences: (i) similar to 2 orders of magnitude higher time constants; (ii) no evidence of two distinguishable defects following irradiation as revealed by the ac conductance measurement; and (iii) absence of latent generation of interface traps following irradiation. On the other hand, the interface-trap transformation process following irradiation is qualitatively similar in silicon nitride and thermal oxide devices. (C) 1996 American Institute of Physics.

引用

页码：8507 / 8511

页数：5

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