Ohmic contacts to semiconducting diamond using a Ti/Pt/Au trilayer metallization scheme

被引：37

作者：

Hoff, HA

Waytena, GL

Vold, CL

Suehle, JS

Isaacson, IP

Rebbert, ML

Ma, DI

Harris, K

机构：

[1] USN, RES LAB, NANOELECT PROC FAC, WASHINGTON, DC 20375 USA

[2] NIST, GAITHERSBURG, MD 20899 USA

[3] HARRIS DIAMOND CORP, MT ARLINGTON, NJ 07865 USA

来源：

关键词：

surface characterization; diffusion; electrical properties; diamond single crystals;

D O I：

10.1016/S0925-9635(96)00566-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ohmic contacts have been fabricated on a naturally occurring type IIb diamond crystal using an annealed Ti/Pt/Au trilayer metallization where the Pt served successfully as a barrier to Ti diffusion into the Au capping layer. However, a specific contact resistance could not be reliably determined using transmission line model measurements. Auger microanalysis revealed the presence of Ti on the diamond surface near the ohmic contact pads. The most likely origin of the Ti on the diamond surface was determined to be lateral diffusion from beneath the contact pads. This would have produced a nonuniform concentration of Ti across the diamond surface which, in turn, would have affected the diamond sheet resistance in a complicated way.

引用

页码：1450 / 1456

页数：7

共 22 条

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