Characterization of organic thin films for OLEDs using spectroscopic ellipsometry

被引:34
作者
Celli, FG
Harton, TB
Faye, O
机构
[1] Semiconduct. R. and D./Technology, Texas Instruments, Inc., M/S 147, Dallas, TX 75265
关键词
organic films; organic light emitting diodes (OLEDs); spectroscopic ellipsometry;
D O I
10.1007/s11664-997-0103-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the optical characterization of thin, evaporated organic films used in fabrication of organic light emitting diodes (OLEDs):N,N'-diphenyl-N,N'-bis(3-methyl-phenyl)-1,1'biphenyl-4,4'diamine, or TPD, and tris(8-hydroxy)quinolato aluminum, or Alq(3). In particular, we have obtained and analyzed spectroscopic ellipsometry (SE) data using a multi-sample approach, to determine the optical constants for Alq(3) and TPD films over the wavelength range 250-850 nm. We show that bi-layer Alq(3)/TPD films on Si can be analyzed for individual layer thicknesses, even though the refractive index is nearly identical for these films in the visible region. Simulations of in situ monitoring are also presented, which show sub-nm thickness resolution for organic layer growth on a Si monitor wafer. SE has great utility for process control, either by ex situ or in situ thickness measurement.
引用
收藏
页码:366 / 371
页数:6
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