ELLIPSOMETRIC MONITORING AND CONTROL OF THE RAPID THERMAL-OXIDATION OF SILICON

被引：15

作者：

CONRAD, KA ^{[1
]}

SAMPSON, RK ^{[1
]}

MASSOUD, HZ ^{[1
]}

IRENE, EA ^{[1
]}

机构：

[1] DUKE UNIV, DEPT ELECT ENGN, SEMICOND RES LAB, DURHAM, NC 27708 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 06期

关键词：

D O I：

10.1116/1.586548

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single wavelength ellipsometry is demonstrated for in situ process monitoring and control in a rapid thermal processing system. Simultaneous in situ ellipsometric measurements of the temperature and oxide film thickness allow closed-loop feedback control during film growth. Data are presented for the rapid thermal oxidation of silicon under computer control for oxide thickness ranging from 60 to 175 angstrom and temperatures from 850 to 1000-degrees-C.

引用

页码：2096 / 2101

页数：6

共 20 条

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