E centers in ternary Si1-x-yGexSny random alloys

被引：66

作者：

Chroneos, A. ^{[1
]}

Jiang, C. ^{[2
]}

Grimes, R. W. ^{[1
]}

Schwingenschloegl, U. ^{[1
,3
]}

Bracht, H. ^{[4
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2BP, England

[2] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA

[3] KAUST, PCSE Div, Jeddah 21534, Saudi Arabia

[4] Univ Munster, Inst Mat Phys, D-48149 Munster, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 11期

关键词：

GROUP-IV SEMICONDUCTORS; OPTOELECTRONICS; GE(001);

D O I：

10.1063/1.3224894

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Density functional theory calculations are used to study the association of arsenic (As) atoms to lattice vacancies and the formation of As-vacancy pairs, known as E centers, in the random Si0.375Ge0.5Sn0.125 alloy. The local environments are described by 32-atom special quasirandom structures that represent random Si1-x-yGexSny alloys. It is predicted that the nearest-neighbor environment will exert a strong influence on the stability of E centers in ternary Si0.375Ge0.5Sn0.125. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3224894]

引用

页数：3

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