Engineering the free vacancy and active donor concentrations in phosphorus and arsenic double donor-doped germanium

被引：30

作者：

Chroneos, A. ^{[1
]}

Grimes, R. W. ^{[1
]}

Bracht, H. ^{[2
]}

Uberuaga, B. P. ^{[3
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2BP, England

[2] Univ Munster, Inst Mat Phys, D-48149 Munster, Germany

[3] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 11期

关键词：

D O I：

10.1063/1.3035847

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In germanium, donor atoms migrate or form larger immobile clusters via their interaction with lattice vacancies. By engineering the concentration of free vacancies, it is possible to control the diffusion of the donor atoms and the formation of those larger clusters that lead to the deactivation of a significant proportion of the donor atoms. Electronic structure calculations in conjunction with mass action analysis are used to predict the concentrations of free vacancies and deactivated donor atoms in germanium doped with different proportions of arsenic and phosphorous. We find, for example, that at low temperatures, the concentration of free vacancies is partially suppressed by increasing the proportion of arsenic doping, whereas at high temperatures (above 1000 K), the concentration of free vacancies is relatively constant irrespective of the donor species. It is predicted that the free vacancy and active donor concentrations vary linearly with the arsenic to phosphorous ratio across a wide range of temperatures. (C) 2008 American Institute of Physics.

引用

页数：4

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