Capacitively-detected magnetic resonance in hydrogenated amorphous silicon solar cells

被引：6

作者：

Brandt, MS ^{[1
]}

Neuberger, RT ^{[1
]}

Bayerl, MW ^{[1
]}

Stutzmann, M ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 10B期

关键词：

capacitively detected magnetic resonance; electrically detected magnetic resonance; electron spin resonance; hydrogenated amorphous silicon; capacitance voltage characteristic;

D O I：

10.1143/JJAP.38.L1172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin-dependent transport processes in hydrogenated amorphous silicon (a-Si:H) solar cells at high frequencies are studied with capacitively-detected magnetic resonance (CDMR). A resonant increase of the capacitance at room temperature is found with a g-factor of 2.0055, characteristic for the spin-dependent trapping of electrons at neutral dangling bonds. It is shown that with the help of spin-dependent capacitance measurements quantitative information on the defect density in the device can be obtained, a particular advantage over conventional electrically detected magnetic resonance (EDMR) where resonant changes of the dc conductivity are measured.

引用

页码：L1172 / L1174

页数：3

共 10 条

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