Copper CMP at low shear force for low-k compatability

被引：5

作者：

Tsai, S ^{[1
]}

Chen, L ^{[1
]}

Sun, LX ^{[1
]}

Mavliev, R ^{[1
]}

Hsu, WY ^{[1
]}

Xia, LQ ^{[1
]}

Morad, R ^{[1
]}

机构：

[1] CMP, Prod Business Grp, Appl Mat, Santa Clara, CA 95054 USA

来源：

PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年

关键词：

D O I：

10.1109/IITC.2002.1014902

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Copper CMP faces significant technical challenges at 100 nm technology node and beyond as low-k dielectric materials replace conventional SiO2 dielectrics. Low shear force becomes the focus of CMP process development. However, the effects of shear force during the CMP process have not been fully explored. In this paper, we studied the polishing shear force under various process conditions. The correlation between polishing shear force and low-k material delamination is experimentally established. A low shear force CMP process is developed that demonstrates low-k compatibility with comparable polishing performance to conventional high shear operation region.

引用

页码：102 / 104

页数：3

共 2 条

[1] Low-k dielectrics characterization for Damascene integration [J].

Lin, S ;

Jin, CM ;

Lui, L ;

Tsai, MS ;

Daniels, M ;

Gonzalez, A ;

Wetzel, JT ;

Monnig, KA ;

Winebarger, PA ;

Jang, S ;

Yu, D ;

Liang, MS .

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, :146-148

[2] Interfacial adhesion of copper-low k interconnects [J].

Scherban, T ;

Sun, B ;

Blaine, J ;

Block, C ;

Jin, B ;

Andideh, E .

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, :257-259

← 1 →