Improvement of rinsing efficiency after sulfuric acid hydrogen peroxide mixture (H2SO4/H2O2) by HF addition

被引：5

作者：

Messoussi, R

Verhaverbeke, S

Yabune, T

Nose, M

Ohmi, T

机构：

[1] TOHOKU UNIV,FAC ENGN,DEPT ELECTR ENGN,AOBA KU,SENDAI,MIYAGI 98077,JAPAN

[2] TOHOKU UNIV,INST ELECT COMMUN,AOBA KU,SENDAI,MIYAGI 98077,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 4A期

关键词：

SPFM; contact angle; hydrophobicity; F termination; native oxide thickness; rinsing efficiency; roughness;

D O I：

10.1143/JJAP.35.1989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the improvement in efficiency of deionized water rinsing after using a H2SO4/H2O2/HF mixture which produces hydrophobic Si surfaces by means of fluorine passivation, providing better sulfur removal and shorter rinsing time than the conventional H2SO4/H2O2 mixture. After removing this passivation agent by rinsing in deionized water, the surfaces are still covered with chemical oxide, which protects them from organic contamination. Furthermore this treatment does not induce surface roughening.

引用

页码：1989 / 1992

页数：4

共 16 条

[11] OHNISHI T, 1993, 1993 INT C SOL STAT, P627
[12] OHSAWA A, 1990, SEMICONDUCTOR SILICO, P601
[13] SHIMONO T, 1991, ELECTROCHEMICAL SOC, V911, P278
[14] THE ROLE OF FLUORINE TERMINATION IN THE CHEMICAL-STABILITY OF HF-TREATED SI SURFACES
SUNADA, T
YASAKA, T
TAKAKURA, M
SUGIYAMA, T
MIYAZAKI, S
HIROSE, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2408 - L2410
[15] VERHAVERBEKE S, 1993, ELECTROCHEMICAL SOC, V9313, P199
[16] VERHAVERBEKE S, 1994, ECS P, V9410, P1170

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