In-plane electric field induced by polarization and lateral photovoltaic effect in a-plane GaN

被引：10

作者：

Hu, Weiguo ^{[1
,2
]}

Ma, Bei ^{[2
]}

Li, Dabing ^{[2
,3
]}

Miyake, Hideto ^{[2
]}

Hiramatsu, Kazumasa ^{[2
]}

机构：

[1] Mie Univ, Venture Business Lab, Tsu, Mie 5148507, Japan

[2] Mie Univ, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan

[3] Chinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 23期

关键词：

dielectric polarisation; gallium compounds; III-V semiconductors; light sources; photovoltaic effects; piezoelectricity; semiconductor growth; semiconductor thin films; wide band gap semiconductors; SAPPHIRE;

D O I：

10.1063/1.3144270

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A lateral photovoltaic effect was observed in a-plane GaN films grown on r-plane sapphire at room temperature. Under various light sources illuminations, contacts along the c-axis exhibited about ten times the photovoltage than those along the m-axis, which kept linear relationship with the illumination intensity. It was attributed to anisotropic in-plane electrical field induced by the intrinsic spontaneous/piezoelectric polarization, which spatially separated photogenerated carriers to produce the photovoltage.

引用

页数：3

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