Molecular-beam epitaxy of p-type m-plane GaN -: art. no. 262104

被引：60

作者：

McLaurin, M ^{[1
]}

Mates, TE ^{[1
]}

Speck, JS ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 26期

基金：

日本科学技术振兴机构; 美国国家科学基金会;

关键词：

D O I：

10.1063/1.1977204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the plasma-assisted molecular-beam epitaxy of Mg-doped (10 (1) over bar0) GaN on (10 (1) over bar0) 6H-SiC. Secondary ion mass spectroscopy measurements show the incorporation of Mg into the GaN films with an enhanced Mg incorporation under N-rich conditions relative to Ga-rich growth. Transport measurements of Mg-doped layers grown under Ga-rich conditions show hole concentrations in the range of p=1x10(18) to p=7x10(18) cm(-3) and a dependence between hole concentration and Mg beam equivalent pressure. An anisotropy in in-plane hole mobilities was observed, with the hole mobility parallel to [11 (2) over bar0] being higher than that parallel to [0001] for the same hole concentration. Mobilities parallel to [11 (2) over bar0] were as high as similar to 11.5 cm(2)/Vs (at p similar to 1.8 x 10(18) cm(-3)). (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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