Gallium adsorption onto (11(2)over-bar0) gallium nitride surfaces

被引:18
作者
McLaurin, M [1 ]
Haskell, B
Nakamura, S
Speck, JS
机构
[1] Univ Calif Santa Barbara, JST ERATO UCSB Grp, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
关键词
D O I
10.1063/1.1759086
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on a systematic study of transients in reflection high energy electron diffraction specular intensities due to adsorption and subsequent desorption of gallium onto (11<(2over bar>0 GaN surfaces both during the gallium adsorption by itself or during the growth of GaN by plasma-assisted molecular beam epitaxy. We determined the boundaries between N-rich growth, Ga-rich growth with only a two-dimensional phase of adsorbed Ga, and Ga-rich growth with droplets of liquid Ga. The thermal dependence of the boundary between the Ga-rich regimes with and without droplets was found to be approximately 3.2 eV for both the cases of gallium adsorption and GaN growth. This temperature dependence is explained in terms of a quasiequilibrium model for the interaction between the surface phases. Evidence is presented indicating that the two-dimensional phase saturates at submonolayer coverage for temperatures below 700 degreesC. (C) 2004 American Institute of Physics.
引用
收藏
页码:327 / 334
页数:8
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