Microstructure of M-plane GaN epilayers grown on γ-LiAlO2 by plasma-assisted molecular beam epitaxy

被引：38

作者：

Liu, TY ^{[1
]}

Trampert, A ^{[1
]}

Sun, YJ ^{[1
]}

Brandt, O ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 2004年 / 84卷 / 07期

关键词：

D O I：

10.1080/09500830412331271443

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the defect structure of M-plane GaN(1(1) over bar $ 00) epilayers grown on gamma-LiAlO2(100) substrates by plasma-assisted molecular beam epitaxy. Our transmission electron microscopy studies reveal that the M-plane layers mainly contain intrinsic and extrinsic basal plane stacking faults. Beyond this, a complex type of planar defect is detected in the (10(1) over bar $0) prism plane which is inclined with respect to the interface. This prism plane boundary is connected to stacking faults intersecting the whole sample. Its displacement vector is along the c axis and thus not able to relieve the epitaxial strain. Threading dislocations are dissociated into Shockley partials. The origin of the defect microstructure is discussed with respect to the misfit strain and the substrate surface morphology.

引用

页码：435 / 441

页数：7

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