Minimizing threading dislocations by redirection during cantilever epitaxial growth of GaN

被引：37

作者：

Follstaedt, DM ^{[1
]}

Provencio, PP ^{[1
]}

Missert, NA ^{[1
]}

Mitchell, CC ^{[1
]}

Koleske, DD ^{[1
]}

Allerman, AA ^{[1
]}

Ashby, CIH ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 15期

关键词：

D O I：

10.1063/1.1511286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A 40-fold reduction in density of vertical threading dislocations (VTDs) at the surface of GaN is obtained with cantilever epitaxy by using narrow (<1 mum) mesas etched into a sapphire substrate and conditions producing angled {11-22} facets to initiate growth by metalorganic chemical vapor deposition. These two techniques redirect VTDs over the mesas to the horizontal and away from device areas above. Further reductions appear possible if the facets uniformly cover all mesas prior to cantilever growth. (C) 2002 American Institute of Physics.

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页码：2758 / 2760

页数：3

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