Self-organized propagation of dislocations in GaN films during epitaxial lateral overgrowth

被引：54

作者：

Sakai, A

Sunakawa, H

Kimura, A

Usui, A

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan

[2] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 04期

关键词：

D O I：

10.1063/1.125781

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dislocation propagation and defect evolution in GaN films formed by epitaxial lateral overgrowth (ELO) are examined by transmission electron microscopy. A novel effect that induces self-organized propagation of preexisting dislocations in ELO films is evaluated. This propagation forms dislocations into bundle structures along the stripes of masks used for ELO. The dislocation bundling gives rise to crystallographic tilting in the overgrown region on the mask and leads to a total reduction of threading dislocation density in the film. (C) 2000 American Institute of Physics. [S0003-6951(00)04504-6].

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页码：442 / 444

页数：3

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