Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks

被引：24

作者：

Wang, ZG ^{[1
]}

Parker, CG ^{[1
]}

Hodge, DW ^{[1
]}

Croswell, RT ^{[1
]}

Yang, N ^{[1
]}

Misra, V ^{[1
]}

Hauser, JR ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 04期

关键词：

Fermi level; flatband voltage; interface; ON;

D O I：

10.1109/55.830971

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we demonstrate that the magnitude of flatband voltage (V-FB) Shift for ultrathin (<2 nm) silicon dioxide-silicon nitride (ON) gate stacks in MOSFET's depends on the Fermi level position in the gate material. Tn addition, a fixed positive charge at the oxide-nitride interface was observed.

引用

页码：170 / 172

页数：3

共 8 条

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