Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

被引：27

作者：

Misra, V ^{[1
]}

Lazar, H

Wang, Z

Wu, Y

Niimi, H

Lucovsky, G

Wortman, JJ

Hauser, JR

机构：

[1] N Carolina State Univ, Dept Elect, Raleigh, NC 27695 USA

[2] N Carolina State Univ, Dept Comp Engn, Raleigh, NC 27695 USA

[3] N Carolina State Univ, Dept Mat Sci, Raleigh, NC 27695 USA

[4] N Carolina State Univ, Dept Engn, Raleigh, NC 27695 USA

[5] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[6] N Carolina State Univ, Dept Mat Sci Engn & Phys, Raleigh, NC 27695 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 04期

关键词：

D O I：

10.1116/1.590835

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article addresses the electrical properties of interfaces between n- and p-type Si and remote plasma-deposited Si3N4, which are of interest in aggressively scaled advanced CMOSFETs. The nitride films of this article display excellent electrical properties when implemented into stacked oxide/nitride dielectrics in both NMOSFETs and PMOSFETs with oxide, or nitrided oxide interfaces. The same nitride layers deposited directly onto clean Si surfaces display degraded electrical properties with respect to devices with oxide, or nitrided oxide interfaces. PMOS interfaces are significantly more degraded than n-type metal-oxide semiconductors interfaces indicating a relatively high density of donor-like interface traps that inhibit channel formation. (C) 1999 American Vacuum Society. [S0734-211X(99)04904-5].

引用

页码：1836 / 1839

页数：4

共 14 条

[1] MOSFET transistors fabricated with high permitivity TiO2 dielectrics [J].

Campbell, SA ;

Gilmer, DC ;

Wang, XC ;

Hsieh, MT ;

Kim, HS ;

Gladfelter, WL ;

Yan, JH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (01) :104-109

[2] 2-BAND CONDUCTION OF AMORPHOUS SILICON-NITRIDE [J].

GINOVKER, AS ;

GRITSENKO, VA ;

SINITSA, SP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02) :489-495

[3]

HAUSER JR, UNPUB

[4] INTERFACE STATES AND FIXED CHARGES IN NANOMETER-RANGE THIN NITRIDED OXIDES PREPARED BY RAPID THERMAL ANNEALING [J].

HORI, T ;

NAITO, Y ;

IWASAKI, H ;

ESAKI, H .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :669-671

[5] INVERSION LAYER MOBILITY UNDER HIGH NORMAL FIELD IN NITRIDED-OXIDE MOSFETS [J].

HORI, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (09) :2058-2069

[6] Ultra thin (<3nm) high quality nitride/oxide stack gate dielectrics fabricated by in-situ rapid thermal processing [J].

Kim, BY ;

Luan, HF ;

Kwong, DL .

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :463-466

[7] FOURIER-TRANSFORM INFRARED STUDY OF RAPID THERMAL ANNEALING OF A-SI-N-H(D) FILMS PREPARED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION [J].

LU, Z ;

SANTOS, P ;

STEVENS, G ;

WILLIAMS, MJ ;

LUCOVSKY, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03) :607-613

[8] Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics [J].

Lucovsky, G ;

Wu, Y ;

Niimi, H ;

Misra, V ;

Phillips, JC .

APPLIED PHYSICS LETTERS, 1999, 74 (14) :2005-2007

[9] Making silicon nitride film a viable gate dielectric [J].

Ma, TP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (03) :680-690

[10] ULTRATHIN DEVICE-QUALITY OXIDE-NITRIDE-OXIDE HETEROSTRUCTURE FORMED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION [J].

MA, Y ;

YASUDA, T ;

LUCOVSKY, G .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2226-2228

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