ULTRATHIN DEVICE-QUALITY OXIDE-NITRIDE-OXIDE HETEROSTRUCTURE FORMED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

被引：68

作者：

MA, Y ^{[1
]}

YASUDA, T ^{[1
]}

LUCOVSKY, G ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT PHYS MAT SCI & ENGN,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 17期

关键词：

D O I：

10.1063/1.111681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report our study on an oxide-nitride-oxide (ONO) heterostructure as a dielectric material in a metal-insulator-semiconductor field-effect transistor with Si as a semiconductor. The electrical properties of the ONO dielectrics have been correlated with: (i) the process related effects; (ii) the accumulation of N atoms and its bonding with Si at the SiO2/Si interface; and (iii) the chemical bonding within the nitride layers. By combining the remote plasma enhanced chemical vapor deposition and the rapid thermal annealing process, the device quality ONO structure with an oxide equivalent thickness of 4.7 nm has been successfully manufactured.

引用

页码：2226 / 2228

页数：3

共 21 条

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