IDENTIFICATION OF A PARAMAGNETIC NITROGEN DANGLING BOND DEFECT IN NITRIDED SILICON DIOXIDE FILMS ON SILICON

被引：27

作者：

CHAIYASENA, IA ^{[1
]}

LENAHAN, PM ^{[1
]}

DUNN, GJ ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 19期

关键词：

D O I：

10.1063/1.104986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first observation of a nitrogen dangling bond center in nitrided thermally grown silicon dioxide films on silicon. Interpretation of the N-14 hyperfine parameters indicates that the unpaired electron wave function is strongly localized on the central nitrogen and that the wave function is highly p in character.

引用

页码：2141 / 2143

页数：3

共 17 条

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