INTERFACE STATES AND FIXED CHARGES IN NANOMETER-RANGE THIN NITRIDED OXIDES PREPARED BY RAPID THERMAL ANNEALING

[1] HIGH-TEMPERATURE RAPID THERMAL NITRIDATION OF SILICON DIOXIDE FOR FUTURE VLSI APPLICATIONS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) : 476 - 478

[2] STUDY OF ELECTRICAL CHARACTERISTICS ON THERMALLY NITRIDED SIO2 (NITROXIDE) FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) : 875 - 877

[3] EFFECT OF THERMALLY NITRIDED SIO2 (NITROXIDE) ON MOS CHARACTERISTICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) : 184 - 188

[4] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 498 - 502

[5] Lai S. K., 1983, International Electron Devices Meeting 1983. Technical Digest, P190

[6] RAPID THERMAL NITRIDATION OF SIO2 FOR NITROXIDE THIN DIELECTRICS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1113 - 1115

[7] COMPOSITIONAL STUDIES OF THERMALLY NITRIDED SILICON DIOXIDE (NITROXIDE) [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : 2189 - 2197

[8] THERMAL NITRIDATION OF SI AND SIO2 FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 106 - 123

[9] MOSLEHI MM, 1986, 5TH P INT S SIL MAT, V86, P379

[10] Nulman J., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P169

[1] HIGH-TEMPERATURE RAPID THERMAL NITRIDATION OF SILICON DIOXIDE FOR FUTURE VLSI APPLICATIONS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) : 476 - 478

[2] STUDY OF ELECTRICAL CHARACTERISTICS ON THERMALLY NITRIDED SIO2 (NITROXIDE) FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) : 875 - 877

[3] EFFECT OF THERMALLY NITRIDED SIO2 (NITROXIDE) ON MOS CHARACTERISTICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) : 184 - 188

[4] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 498 - 502

[5] Lai S. K., 1983, International Electron Devices Meeting 1983. Technical Digest, P190

[6] RAPID THERMAL NITRIDATION OF SIO2 FOR NITROXIDE THIN DIELECTRICS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1113 - 1115

[7] COMPOSITIONAL STUDIES OF THERMALLY NITRIDED SILICON DIOXIDE (NITROXIDE) [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : 2189 - 2197

[8] THERMAL NITRIDATION OF SI AND SIO2 FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 106 - 123

[9] MOSLEHI MM, 1986, 5TH P INT S SIL MAT, V86, P379

[10] Nulman J., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P169