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STUDY OF ELECTRICAL CHARACTERISTICS ON THERMALLY NITRIDED SIO2 (NITROXIDE) FILMS
被引:41
作者
:
CHEN, CT
论文数:
0
引用数:
0
h-index:
0
机构:
NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN
NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN
CHEN, CT
[
1
]
TSENG, FC
论文数:
0
引用数:
0
h-index:
0
机构:
NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN
NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN
TSENG, FC
[
1
]
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
机构:
NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN
NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN
CHANG, CY
[
1
]
LEE, MK
论文数:
0
引用数:
0
h-index:
0
机构:
NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN
NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN
LEE, MK
[
1
]
机构
:
[1]
NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1984年
/ 131卷
/ 04期
关键词
:
D O I
:
10.1149/1.2115718
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:875 / 877
页数:3
相关论文
共 16 条
[1]
DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
GAENSSLEN, FH
YU, HN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
YU, HN
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
RIDEOUT, VL
BASSOUS, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
BASSOUS, E
LEBLANC, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
LEBLANC, AR
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
: 256
-
268
[2]
DIELECTRIC BREAKDOWN INDUCED BY SODIUM IN MOS STRUCTURES
DISTEFANO, TH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
DISTEFANO, TH
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(01)
: 527
-
528
[3]
EFFECTS OF PROCESSING ON HOT-ELECTRON TRAPPING IN SIO2
GDULA, RA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
GDULA, RA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(01)
: 42
-
47
[4]
CONDUCTION AND TRAPPING OF ELECTRONS IN HIGHLY STRESSED ULTRATHIN FILMS OF THERMAL SIO2
HARARI, E
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES AIRCRAFT CO,NEWPORT BEACH RES CTR,NEWPORT BEACH,CA 92663
HUGHES AIRCRAFT CO,NEWPORT BEACH RES CTR,NEWPORT BEACH,CA 92663
HARARI, E
[J].
APPLIED PHYSICS LETTERS,
1977,
30
(11)
: 601
-
603
[5]
NITRIDATION OF SILICON AND OXIDIZED-SILICON
HAYAFUJI, Y
论文数:
0
引用数:
0
h-index:
0
HAYAFUJI, Y
KAJIWARA, K
论文数:
0
引用数:
0
h-index:
0
KAJIWARA, K
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(09)
: 2102
-
2108
[6]
DIRECT THERMAL NITRIDATION OF SILICON DIOXIDE FILMS IN ANHYDROUS AMMONIA GAS
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
NOZAKI, T
论文数:
0
引用数:
0
h-index:
0
NOZAKI, T
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(09)
: 2053
-
2057
[7]
EFFECT OF THERMALLY NITRIDED SIO2 (NITROXIDE) ON MOS CHARACTERISTICS
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
NAKAMURA, T
论文数:
0
引用数:
0
h-index:
0
NAKAMURA, T
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(01)
: 184
-
188
[8]
RETARDATION OF DESTRUCTIVE BREAKDOWN OF SIO2-FILMS ANNEALED IN AMMONIA GAS
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
ARAKAWA, H
论文数:
0
引用数:
0
h-index:
0
ARAKAWA, H
NOZAKI, T
论文数:
0
引用数:
0
h-index:
0
NOZAKI, T
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(10)
: 2248
-
2251
[9]
LANGE NA, 1956, HDB CHEM, P1092
[10]
THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
MURARKA, SP
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
CHANG, CC
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
ADAMS, AC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(06)
: 996
-
1003
←
1
2
→
共 16 条
[1]
DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
GAENSSLEN, FH
YU, HN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
YU, HN
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
RIDEOUT, VL
BASSOUS, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
BASSOUS, E
LEBLANC, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
LEBLANC, AR
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
: 256
-
268
[2]
DIELECTRIC BREAKDOWN INDUCED BY SODIUM IN MOS STRUCTURES
DISTEFANO, TH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
DISTEFANO, TH
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(01)
: 527
-
528
[3]
EFFECTS OF PROCESSING ON HOT-ELECTRON TRAPPING IN SIO2
GDULA, RA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
GDULA, RA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(01)
: 42
-
47
[4]
CONDUCTION AND TRAPPING OF ELECTRONS IN HIGHLY STRESSED ULTRATHIN FILMS OF THERMAL SIO2
HARARI, E
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES AIRCRAFT CO,NEWPORT BEACH RES CTR,NEWPORT BEACH,CA 92663
HUGHES AIRCRAFT CO,NEWPORT BEACH RES CTR,NEWPORT BEACH,CA 92663
HARARI, E
[J].
APPLIED PHYSICS LETTERS,
1977,
30
(11)
: 601
-
603
[5]
NITRIDATION OF SILICON AND OXIDIZED-SILICON
HAYAFUJI, Y
论文数:
0
引用数:
0
h-index:
0
HAYAFUJI, Y
KAJIWARA, K
论文数:
0
引用数:
0
h-index:
0
KAJIWARA, K
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(09)
: 2102
-
2108
[6]
DIRECT THERMAL NITRIDATION OF SILICON DIOXIDE FILMS IN ANHYDROUS AMMONIA GAS
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
NOZAKI, T
论文数:
0
引用数:
0
h-index:
0
NOZAKI, T
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(09)
: 2053
-
2057
[7]
EFFECT OF THERMALLY NITRIDED SIO2 (NITROXIDE) ON MOS CHARACTERISTICS
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
NAKAMURA, T
论文数:
0
引用数:
0
h-index:
0
NAKAMURA, T
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(01)
: 184
-
188
[8]
RETARDATION OF DESTRUCTIVE BREAKDOWN OF SIO2-FILMS ANNEALED IN AMMONIA GAS
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
ARAKAWA, H
论文数:
0
引用数:
0
h-index:
0
ARAKAWA, H
NOZAKI, T
论文数:
0
引用数:
0
h-index:
0
NOZAKI, T
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(10)
: 2248
-
2251
[9]
LANGE NA, 1956, HDB CHEM, P1092
[10]
THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
MURARKA, SP
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
CHANG, CC
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
ADAMS, AC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(06)
: 996
-
1003
←
1
2
→