Ultrathin oxide-nitride gate dielectric MOSFET's

被引：66

作者：

Parker, CG ^{[1
]}

Lucovsky, G

Hauser, JR

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[2] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.663529

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first ultrathin oxide-nitride (O-N) gate dielectrics with oxide equivalent thickness of less than 2 nm have been deposited and characterized in n-MOSFET's. The O-N gates, deposited by remote plasma-enhanced CVD, demonstrate reduced gate leakage when compared with oxides of equivalent thickness while retaining comparable drive currents.

引用

页码：106 / 108

页数：3

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