Stable avalanche-photodiode operation of ZnSe-based p+-n structure blue-ultraviolet photodetectors

被引：32

作者：

Ishikura, H ^{[1
]}

Abe, T ^{[1
]}

Fukuda, N ^{[1
]}

Kasada, H ^{[1
]}

Ando, K ^{[1
]}

机构：

[1] Tottori Univ, Fac Engn, Elect & Elect Dept, Tottori 6808552, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 08期

关键词：

D O I：

10.1063/1.125941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high-field operation of p(+)-n structure blue-ultraviolet photodetectors has been studied using ZnSe-based II-VI wide-band-gap compound semiconductors grown by molecular-beam epitaxy (MBE). With an improved crystal quality on macrodefects (dislocations and stacking faults) during an initial MBE growth as well as an optimized device structure including a complete superlattice ohmic-contact layer, a stable high electric-field operation up to 8x10(5) V/cm is established. It is demonstrated that the p(+)-n ZnSe photodiodes have shown a stable avalanche-photodiode operation with a large avalanche gain of G=60 in the blue-ultraviolet region at room temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)02208-7].

引用

页码：1069 / 1071

页数：3

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