ELECTROMIGRATION IN P-TYPE ZNSE-LI

被引：33

作者：

HAASE, MA

DEPUYDT, JM

CHENG, H

POTTS, JE

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.104355

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electromigration has been observed in certain Li-doped p-type ZnSe epitaxial layers. A correlation is observed between the magnitude of the electromigration and the degree of compensation in the layers, which is consistent with electromigration of Li interstitials. Significantly, uncompensated layers show no electromigration, illustrating that Li atoms on Zn lattice sites (acceptors) are stable at room temperature. The effects of electromigration on the behavior of ZnSe blue light-emitting diodes is considered, and shown to be beneficial in devices with compensated p-type layers.

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页码：1173 / 1174

页数：2

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