Progress in EUV optics lifetime expectations

被引：43

作者：

Mertens, B

Weiss, M

Meiling, H

Klein, R

Louis, E

Kurt, R

Wedowski, M

Trenkler, H

Wolschrijn, B

Jansen, R

van de Runstraat, A

Moors, R

Spee, K

Plöger, S

van de Kruijs, R

机构：

[1] TNO, TPD, NL-2600 AD Delft, Netherlands

[2] Carl Zeiss, D-7082 Oberkochen, Germany

[3] ASML, Veldhoven, Netherlands

[4] PTB, Berlin, Germany

[5] FOM, Nieuwegein, Netherlands

[6] Philips Res Labs, Eindhoven, Netherlands

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 73-4卷

关键词：

EUV lithography; optics lifetime; carbon growth; oxidation; cap layers;

D O I：

10.1016/j.mee.2004.02.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optics lifetime and contamination is one of the major challenges for extreme ultraviolet (EUV) lithography. The basic contamination and lifetime limiting processes are carbon growth and oxidation of the mirrors. Without appropriate measures, optics lifetime will be limited to a few hours. Within the EUV alpha-tool project of ASML and Carl Zeiss, several potential solutions. towards improvement of optics life time are being studied: vacuum improvement, capping layers for oxidation protection, mitigation of carbon growth and development of efficient cleaning techniques that are soft to the mirror. For instance, we have been able to identify a capping layer that shows carbon growth even under extremely oxidizing conditions.. The current status of our experiments leads us to believe that A lifetime of 1000 h is within reach. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：16 / 22

页数：7

共 16 条

[1] BAJT S, 2003, SPIE, V5037, P237
[2] INVESTIGATION OF CARBON CONTAMINATION OF MIRROR SURFACES EXPOSED TO SYNCHROTRON RADIATION
BOLLER, K
HAELBICH, RP
HOGREFE, H
JARK, W
KUNZ, C
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 208 (1-3): : 273 - 279
[3] Radiation-induced protective carbon coating for extreme ultraviolet optics
Klebanoff, LE
Clift, WM
Malinowski, ME
Steinhaus, C
Grunow, P
Bajt, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (02): : 696 - 703
[4] First environmental data from the EUV engineering test stand
Klebanoff, LE
Malinowski, ME
Grunow, P
Clift, WM
Steinhaus, C
Leung, AH
Haney, SJ
[J]. EMERGING LITHOGRAPHIC TECHNOLOGIES V, 2001, 4343 : 342 - 346
[5] Lifetime testing of EUV optics using intense synchrotron radiation at the PTB Radiometry Laboratory
Klein, R
Gottwald, A
Scholze, F
Thornagel, R
Tümmler, J
Ulm, G
Wedowski, M
Stietz, F
Mertens, B
Koster, N
van Elp, J
[J]. SOFT X-RAY AND EUV IMAGING SYSTEMS II, 2001, 4506 : 105 - 112
[6] Progress in Mo/Si multilayer coating technology for EUVL optics
Louis, E
Yakshin, AE
Görts, PC
Oestreich, S
Stuik, R
Maas, ELG
Kessels, MJH
Bijkerk, F
Haidl, M
Müllender, S
Mertin, M
Schmitz, D
Scholze, F
Ulm, G
[J]. EMERGING LITHOGRAPHIC TECHNOLOGIES IV, 2000, 3997 : 406 - 411
[7] Controlling contamination in Mo/Si multilayer mirrors by Si surface-capping modifications
Malinowski, M
Steinhaus, C
Clift, M
Klebanoff, LE
Mrowka, S
Soufli, R
[J]. EMERGING LITHOGRAPHIC TECHNOLOGIES VI, PTS 1 AND 2, 2002, 4688 : 442 - 453
[8] Use of molecular oxygen to reduce EUV-induced carbon contamination of optics
Malinowski, M
Grunow, P
Steinhaus, C
Clift, M
Klebanoff, L
[J]. EMERGING LITHOGRAPHIC TECHNOLOGIES V, 2001, 4343 : 347 - 356
[9] MALINOWSKI ME, 2003, SPIE, V5037, P429
[10] The EUV program at ASML:: an update
Meiling, H
Banine, V
Kürz, P
Blum, B
Heerens, GJ
Harned, N
[J]. EMERGING LITHOGRAPHIC TECHNOLOGIES VII, PTS 1 AND 2, 2003, 5037 : 24 - 35

← 1 2 →